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Correlation between plant cell wall stiffening and root extension arrest phenotype in combined abiotic stress of Fe and Al

The plasticity and growth of plant cell walls (CWs) is still not sufficiently understood on its molecular level. *

Atomic Force Microscopy (AFM) has been shown to be a powerful tool to measure the stiffness of plant tissues. *

In the article “Correlation between plant cell wall stiffening and root extension arrest phenotype in the combined abiotic stress of Fe and Al” Harinderbir Kaur, Jean-Marie Teulon, Christian Godon, Thierry Desnos, Shu-wen W. Chen and Jean-Luc Pellequer describe the use of atomic force microscopy (AFM) to observe elastic responses of the root transition zone of 4-day-old Arabidopsis thaliana wild-type and almt1-mutant seedlings grown under Fe or Al stresses. *

In order to evaluate the relationship between root extension and root cell wall elasticity, the authors used Atomic Force Microscopy to perform vertical indentations on surfaces of living plant roots. *

NanoWorld Pyrex-Nitride silicon-nitride PNP-TR AFM probes with triangular AFM cantilevers were used for the nanoindentation experiments with atomic force microscopy. (PNP-TR AFM cantilever beam 2 (CB2) with a typical force constant of 0.08 N/m and a typical resonant frequency of 17 kHz, typical AFM tip radius 10 nm, macroscopic half cone angles 35°). *

Force-distance (F-D) curves were measured using the Atomic Force Microscope and the PNP-TR AFM tips. *

Because of the heterogeneity of seedling CW surfaces, Harinderbir Kaur et al. used the recently developed trimechanics-3PCS framework for interpreting force-distance curves. The trimechanics-3PCS framework allows the extraction of both stiffness and elasticity along the depth of indentation and permits the investigation of the variation of stiffness with varied depth for biomaterials of heterogeneous elasticity responding to an external force. *

A glass slide with a glued seedling (see Figure 1 cited below) was positioned under the AFM cantilever with the help of an AFM optical camera. Due to the large motorized sample stage of the AFM, the glass slide was adjusted in such a way that the AFM cantilever could be positioned perpendicularly at the longitudinal middle of the glued root. The target working area, the transition zone, was 500 µm away from the root apex, almost twice the length of PNP-TR AFM cantilever. *

As shown in the article the presence of single metal species Fe²⁺ or Al³⁺ at 10 μM exerts no noticeable effect on the root growth compared with the control conditions. On the contrary, a mix of both the metal ions produced a strong root-extension arrest concomitant with significant increase of CW stiffness. *

Raising the concentration of either Fe²⁺or Al³⁺ to 20 μM, no root-extension arrest was observed; nevertheless, an increase in root stiffness occurred. In the presence of both the metal ions at 10 μM, root-extension arrest was not observed in the almt1 mutant, which substantially abolishes the ability to exude malate. The authors’ results indicate that the combination of Fe²⁺and Al³⁺ with exuded malate is crucial for both CW stiffening and root-extension arrest. *

It is shown that the elasticity of plant CW is sensitive and can be used to assess abiotic stresses on plant growth and stiffening. *

However, stiffness increase induced by single Fe²⁺ or Al³⁺ is not sufficient for arresting root growth in the described experimental conditions and unexpectedly, the stiffening and the phenotype of seedling roots such as REA are not directly correlated. *

Figure 1 from Harinderbir Kaur et al. 2024 “Correlation between plant cell wall stiffening and root extension arrest phenotype in the combined abiotic stress of Fe and Al”:Principle of nanomechanical measurement of seedling roots with atomic force microscopy. A seedling root (R) is deposited on a microscope slide using silicon glue (N, for Nusil). A fastening band of silicon is seen near the tip of the root (T). The thickness of the fastening band must be thin enough to avoid hindering the AFM support (S), but thick enough to withstand the bending of the root tip. The root is placed under the AFM cantilever (C) as observed by the AFM optical camera. The triangular shaped cantilever (200 µm long) was placed 500 µm away from the root tip in the transition zone where nanoindentation measurements proceeded (as shown). The seedling root and the AFM cantilever are placed within a liquid environment (growth solution, see Supplementary file of the cited article). AFM, atomic force microscopy. NanoWorld Pyrex-Nitride silicon-nitride PNP-TR AFM probes with triangular AFM cantilevers were used for the nanoindentation experiments with atomic force microscopy. — Figure 1 from Harinderbir Kaur et al. 2024 “Correlation between plant cell wall stiffening and root extension arrest phenotype in the combined abiotic stress of Fe and Al”:
Principle of nanomechanical measurement of seedling roots with atomic force microscopy.
A seedling root (R) is deposited on a microscope slide using silicon glue (N, for Nusil). A fastening band of silicon is seen near the tip of the root (T). The thickness of the fastening band must be thin enough to avoid hindering the AFM support (S), but thick enough to withstand the bending of the root tip. The root is placed under the AFM cantilever (C) as observed by the AFM optical camera. The triangular shaped cantilever (200 µm long) was placed 500 µm away from the root tip in the transition zone where nanoindentation measurements proceeded (as shown). The seedling root and the AFM cantilever are placed within a liquid environment (growth solution, see Supplementary file of the cited article). AFM, atomic force microscopy.

*Harinderbir Kaur, Jean‐Marie Teulon, Christian Godon, Thierry Desnos, Shu‐wen W. Chen and Jean‐Luc Pellequer
Correlation between plant cell wall stiffening and root extension arrest phenotype in the combined abiotic stress of Fe and Al
Plant, Cell & Environment 2024; 47:574–584
DOI: https://doi.org/10.1111/pce.14744

The article “Correlation between plant cell wall stiffening and root extension arrest phenotype in the combined abiotic stress of Fe and Al” by Harinderbir Kaur, Jean‐Marie Teulon, Christian Godon, Thierry Desnos, Shu‐wen W. Chen and Jean‐Luc Pellequer is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third-party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.

C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications

In the search for lead-free, Si-microfabrication-compatible piezoelectric materials, thin films of scandium-doped aluminum nitride (Al,Sc)N are of great interest for use in actuators, energy harvesting, and micro-electromechanical-systems (MEMS).*

While the piezoelectric response of AlN increases upon doping with Sc, difficulties are encountered during film preparation because, as bulk solids with completely different structures and large differences in cation radii, ScN (rock salt, cubic) and AlN (wurtzite, hexagonal) are immiscible. *

Consequently, (Al,Sc)N is inherently thermodynamically unstable and prone to phase segregation. Film preparation is further complicated by the technological requirement for polar [001] or [00 1̲] out-of-plane texture, which is achieved using a seeding layer.*

In the article “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications” Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre propose a protocol for successfully depositing [001] textured, 2–3 µm thick films of Al0.75Sc0.25N.*

The procedure relies on the fact that sputtered Ti is [001]-textured α-phase (hcp). Diffusion of nitrogen ions into the α-Ti film during reactive sputtering of Al0.75,Sc0.25N likely forms a [111]-oriented TiN intermediate layer. The lattice mismatch of this very thin film with Al0.75Sc0.25N is ~3.7%, providing excellent conditions for epitaxial growth. In contrast to earlier reports, the Al0.75Sc0.25N films prepared in the current study are Al-terminated. Low growth stress (<100 MPa) allows films up to 3 µm thick to be deposited without loss of orientation or decrease in piezoelectric coefficient. *

An advantage of the proposed technique is that it is compatible with a variety of substrates commonly used for actuators or MEMS, as demonstrated here for both Si wafers and D263 borosilicate glass. Additionally, thicker films can potentially lead to increased piezoelectric stress/strain by supporting application of higher voltage, but without increase in the magnitude of the electric field. *

SEM, AFM, EDS, XRD and XPS techniques were used for the film characterization. For the nanoscale topography maps with atomic force microscopy (AFM) NanoWorld Pyrex-Nitride series PNP-TRS silicon nitride AFM probes were used in peak-force tapping^1® mode. *

Figure 3 from Asaf Cohen et al. “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications”: AFM images of (a) a (100) silicon wafer following cleaning procedures as described in the Materials and Methods section; (b) 50 nm-thick Ti film deposited on the wafer at 300 K; (c) the same film following exposure to N2 plasma at 673 K for 30 min. For the nanoscale topography maps with atomic force microscopy (AFM) NanoWorld Pyrex-Nitride PNP-TRS AFM probes were used in peak-force tapping mode1. * — Figure 3 from Asaf Cohen et al. “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications”: AFM images of (a) a (100) silicon wafer following cleaning procedures as described in the Materials and Methods section; (b) 50 nm-thick Ti film deposited on the wafer at 300 K; (c) the same film following exposure to N2 plasma at 673 K for 30 min.

*Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre
C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications
Sensors 2022, 22, 7041
DOI: https://doi.org/10.3390/s22187041

The article “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications” by Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third-party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.

¹Peak Force Tapping® is a registered trademark of Bruker Corporation.

Feasibility of wear reduction for soft nanostructured thin film through enhanced elastic recoverability and contact stress relief

Over several decades many studies on the reduction of wear of mechanical systems have been conducted.
Methods to reduce wear are generally divided into the following categories: applying lubrication, coating with high-hardness materials, and surface texturing. *

Several studies have reported that coatings with higher hardness show more wear than those with lower hardness. From these reports, it is apparent that wear does not depend solely on the hardness of the surface. Hence, there is a strong motivation for utilizing additional strategies for designing wear-resistive surfaces rather than only enhancing the hardness of the coating. *

In the article “Feasibility of wear reduction for soft nanostructured thin film through enhanced elastic recoverability and contact stress relief” Kuk-Jin Seo, Hyun-Joon Kim and Dae-Eun Kim show, that a soft, thin film comprising randomly aligned carbon nanotubes (CNTs) can reduce surface wear more effectively than a homogeneous thin film because of enhanced elastic recoverability and contact stress relief originating from its mesh structure. *

To investigate the wear characteristics of the mesh structure compared to those of the homogeneous thin film, multi-walled CNTs (MWCNTs) and diamond-like carbon (DLC) thin films were prepared to conduct nanoscale tribological experiments using atomic force microscopy (AFM). The MWCNT thin film showed unmeasurably low wear compared with the DLC thin film under a certain range of normal load. *

To demonstrate the wear reduction mechanism of the MWCNT thin film, its indentation and frictional behaviors were assessed. The indentation behavior of the MWCNT thin film revealed repetitive elastic deformation with a wide strain range and a significantly lower elastic modulus than that of the DLC thin film. The permanent deformation of the MWCNT thin film was observed through frictional experiments under relatively high normal load conditions. *

The presented results are expected to provide insights into the design of highly wear-resistant surfaces using nanostructures. *

The thickness and surface roughness of the MWCNT and DL thin films were measured using Atomic Force Microscopy. *

The force-displacement (F-D) curves were measured on the MWCNT thin film using the AFM to verify the mechanical behavior when indented by the zirconia microspheres that were used for wear and friction experiments. *

The adhesion forces between the thin films and zirconia microspheres were measured by observing the pull-off force of the F-D curve with the AFM. *

The adhesion force was measured using a colloidal AFM probe to aid the analysis of the tribological characteristics of the thin film. *

The pull-off forces for the DL specimens were obtained at 35 different locations with displacements of 50-200 nm. *

Diamond-coated AFM probes (NanoWorld Pointprobe® DT-NCHR ) were used for scanning, while non-coated silicon AFM probes with relatively high and low spring constants (NanoWorld Pointprobe® NCHR and CONTR) were used for the tribological experiments and specimen characterizations. *

*Kuk-Jin Seo, Hyun-Joon Kim and Dae-Eun Kim
Feasibility of wear reduction for soft nanostructured thin film through enhanced elastic recoverability and contact stress relief
Friction 11(7): 1292-1306 (2023)
DOI: https://doi.org/10.1007/s40544-022-0669-7

Please follow this external link to read the full article: https://rdcu.be/dejTa

The article “Feasibility of wear reduction for soft nanostructured thin film through enhanced elastic recoverability and contact stress relief” by Kuk-Jin Seo, Hyun-Joon Kim and Dae-Eun Kim is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third-party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.