Tag: Arrow-EFM

Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films

Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties.*

In the article “Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films” Srinivasu Kunuku, Mateusz Ficek, Aleksandra Wieloszynska, Magdalena Tamulewicz-Szwajkowska, Krzysztof Gajewski, Miroslaw Sawczak, Aneta Lewkowicz, Jacek Ryl, Tedor Gotszalk and Robert Bogdanowicz describe how B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process.*

The surface topography of the CVD diamond layers was investigated using atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM) was employed to measure the contact potential difference (CPD) to calculate the work function of these CVD diamond layers.*

Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74–4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations.*

NanoWorld ARROW-EFM conductive platinumirdidium5 coated AFM probes with a typical spring constant of 2.8 N/m and a typical resonant frequency of 75 kHz were used.*

Figure 2 from “Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films “ by Srinivasu Kunuku et al: AFM topography of B/N co-doped CVD diamond on (with fixed N/C = 0.02) SCD IIa; (a) B/C ∼ 2500 ppm (b) B/C ∼ 5000 ppm (c) B/C ∼ 7500 ppm, and KPFM CPD images of B/N co-doped CVD diamond (with fixed N/C = 0.02) on SCD IIa; (d) B/C ∼ 2500 ppm (e) B/C ∼ 5000 ppm (f) B/C ∼ 7500 ppm. NanoWorld Arrow-EFM platinumiridium coated AFM probes were used for the KPFM and surface topography measurements.
Figure 2 from “Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films “ by Srinivasu Kunuku et al:
AFM topography of B/N co-doped CVD diamond on (with fixed N/C = 0.02) SCD IIa; (a) B/C ∼ 2500 ppm (b) B/C ∼ 5000 ppm (c) B/C ∼ 7500 ppm, and KPFM CPD images of B/N co-doped CVD diamond (with fixed N/C = 0.02) on SCD IIa; (d) B/C ∼ 2500 ppm (e) B/C ∼ 5000 ppm (f) B/C ∼ 7500 ppm.

*Srinivasu Kunuku, Mateusz Ficek, Aleksandra Wieloszynska, Magdalena Tamulewicz-Szwajkowska, Krzysztof Gajewski, Miroslaw Sawczak, Aneta Lewkowicz, Jacek Ryl, Tedor Gotszalk and Robert Bogdanowicz
Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films
Nanotechnology (2022),  33 125603
DOI: https://doi.org/10.1088/1361-6528/ac4130

Please follow this external link to read the full article: https://doi.org/10.1088/1361-6528/ac4130

Open Access The article “Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films” by Srinivasu Kunuku, Mateusz Ficek, Aleksandra Wieloszynska, Magdalena Tamulewicz-Szwajkowska, Krzysztof Gajewski, Miroslaw Sawczak, Aneta Lewkowicz, Jacek Ryl, Tedor Gotszalk and Robert Bogdanowicz is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

Optimized positioning through maximized tip visibility – Arrow AFM probes screencast passes 500 views mark

The screencast about NanoWorld Arrow Silicon AFM probes held byNanoWorld AG CEO Manfred Detterbeck has just passed the 500 views mark. Congratulations Manfred!

NanoWorld Arrow™ AFM probes are designed for easy AFM tip positioning and high resolution AFM imaging and are very popular with AFM users due to the highly symetric scans that are possible with these AFM probes because of their special tip shape. They fit to all well-known commercial SPMs (Scanning Probe Microscopes) and AFMs (Atomic Force Microscopes). The Arrow AFM probe consists of an AFM probe support chip with an AFM cantilever which has a tetrahedral AFM tip at its triangular free end.

The Arrow AFM probe is entirely made of monolithic, highly doped silicon.

The unique Arrow™ shape of the AFM cantilever with the AFM tip always placed at the very end of the AFM cantilever allows easy positioning of the AFM tip on the area of interest.
The Arrow AFM probes are available for non-contact mode, contact mode and force modulation mode imaging and are also available with a conductive platinum iridum coating. Furthermore the Arrow™ AFM probe series also includes a range of tipless AFM cantilevers and AFM cantilever arrays as well as dedicated ultra-high frequency Arrow AFM probes for high speed AFM.

To find out more about the different variations please have a look at:

https://www.nanoworld.com/arrow-afm-tips

You can also find various application examples for the Arrow AFM probes in the NanoWorld blog. For a selection of these articles just click on the “Arrow AFM probes” tag on the bottom of this blog entry.

 

 

Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects

Topological objects and defects (e.g. skyrmions, domain walls, vortices,) in condensed matters have attracted a lot of interest as a field for exploring emerging exotic phenomena and functionalities.*

In materials with ferroic order, these topological objects can also be manipulated and controlled by external fields without disrupting their host lattice, making them promising elemental building blocks for potential configurable topological nanoelectronics. *

Ferroelectric topological objects provide a promising area for investigating emerging physical properties that could potentially be utilized in future nanoelectronic devices. *

In the article “Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects” Wenda Yang, Guo Tian, Yang Zhang, Fei Xue, Dongfeng Zheng, Luyong Zhang, Yadong Wang, Chao Chen, Zhen Fan, Zhipeng Hou, Deyang Chen, Jinwei Gao, Min Zeng, Minghui Qin, Long-Qing Chen, Xingsen Gao and Jun-Ming Liu demonstrate the existence of metallic conduction superfine (<3 nm) channels in two types of exotic topological defects, namely a quadrant vortex core or simply vortex core and a quadrant center domain core or simply center core, in an array of BiFeO3 (BFO) nanoislands.*

The authors discover via the phase-field simulation that the superfine metallic conduction channels along the center cores arise from the screening charge carriers confined at the core region, whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be reversibly created and deleted by manipulating the two topological states via electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103.*

The findings by Wenda Yang et al. open up the possibility of using these functional one-dimensional topological objects in high-density nanoelectronic devices, e.g. nonvolatile memory.*

NanoWorld PlatinumIdridium5 coated Arrow-EFM AFM probes were used to examine the domain structures by vector piezoresponse force microscopy (PFM). By using vector PFM mode, the authors could simultaneously map the vertical and lateral piezoresponse signals from the nanoisland one by one.*

NanoWorld Conductive Diamond coated AFM probes CDT-NCHR were used for the conductive current distribution maps, current–voltage (I–V) measurements that were characterized by conductive atomic force microscopy (C-AFM).

Fig. 2 from “Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects” by Wenda Yang et al.:
The domain structures and corresponding conductive properties for both a vortex and a center topological states confined in two nanoislands.
a, b PFM and C-AFM images for both a vortex state (a) and a center state (b), the micrographs from the left to the right are PFM vertical phase images illustrating the uniform upward vertical polarization components for both nanoislands, the PFM lateral phase images recorded at sample rotation of 0o and 90o to evaluate the directions of lateral polarization components respectively along x axis ([100] axis) and y axis ([100] axis), the lateral polarization vector direction maps derived from the PFM data, and corresponding C-AFM maps. The thick arrows aside the PFM images mark the directions of the cantilever for each PFM scan, and the fine arrows inside the images mark the directions of polarization components perpendicular to the directions of the cantilever. c, d Extracted current spatial profiles from the C-AFM maps for both the vortex (c) and the center (d) cores, extracted from a and b, respectively. The inserts in c and d illustrate the C-AFM maps and schematic local polarization configurations for the two topological cores. e Temperature-dependent conductive current (I–V) curves for both topological cores and domain walls.*

*Wenda Yang, Guo Tian, Yang Zhang, Fei Xue, Dongfeng Zheng, Luyong Zhang, Yadong Wang, Chao Chen, Zhen Fan, Zhipeng Hou, Deyang Chen, Jinwei Gao, Min Zeng, Minghui Qin, Long-Qing Chen, Xingsen Gao and Jun-Ming Liu
Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects
Nature Communications volume 12, Article number: 1306 (2021)
DOI: https://doi.org/10.1038/s41467-021-21521-9

Please follow this external link to read the full article: https://rdcu.be/cg0JY

Open Access : The article “Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects” by Wenda Yang, Guo Tian, Yang Zhang, Fei Xue, Dongfeng Zheng, Luyong Zhang, Yadong Wang, Chao Chen, Zhen Fan, Zhipeng Hou, Deyang Chen, Jinwei Gao, Min Zeng, Minghui Qin, Long-Qing Chen, Xingsen Gao and Jun-Ming Liu is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.